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Naslov: Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices
Vir:

Nano Devices and Sensors [1-5015-1050-9; 1-5231-0461-9] Chang, Yao-Feng

l.:2016 str.:73 -90

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  Dostopnost: Dostop je mogoč iz prostorov univerze in z oddaljenim dostopom za študente in zaposlene Univerze na Primorskem.

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