Contains information about title and source of a journal
Naslov:
Electronic properties of defects created in epitaxially grown n-Si by low energy He and Ar ions
Vir:
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms
[0168-583X]
Auret,
F D
l. 1997,
letn. 127,
str. 393
-396